Chatham University

Physics Faculty and Staff

Jamiyanaa Dashdorj, PhD

Jamiyanaa Dashdorj,

J.Dashdorj@Chatham.edu
Assistant Professor of Physics
Hometown : UlanBator
Joined Chatham : Fall 2016

Academic Areas of Interest

Dr. Dashdorj teaches calculus-based physics (both the lecture and laboratory courses: PHY 251/252, and PHY 255/256) for science major students. He does research with Dr. Larry Viehland and Dr. Rainer Jonhsen (emeritus professor of physics at University of Pittsburgh) to improve accuracy of gaseous ion mobility measurement using drift tube mass spectrometry at Buhl Hall. He also collaborates with Dr. Randall Feenstra’s research group at Carnegie Mellon University to study nanostructured materials using low-temperature scanning tunneling microscopy.

Personal Areas of Interest

Soccer, chess and travel.

Biography

Jami Dashdorj grew up in Mongolia, studied and trained in Austria, Italy, and Brazil, before coming to US for graduate school. He earned his PhD in applied physics from Colorado School of Mines building a non-contact, non-destructive minority carrier recombination lifetime mapping system at National Renewable Energy Laboratory, Golden, Colorado. Prior to joining the faculty at Chatham, Dr. Dashdorj was a research associate at University of Alabama (Birmingham). With Dr. Mary Ellen Zvanut, he investigated point defects and charge transfer mechanisms in GaN, SrTiO3, ZnSe and SiC using electron paramagnetic resonance spectroscopy. While at UAB, he taught a laboratory-based introductory physical science course for seven years. Dr. Dashdorj has also a strong interest in developing numerical models which can explain the origin and temporal aspects of charge transfer processes in semiconductors.

Education

  • PhD in Applied Physics, Colorado School of Mines (Golden, CO)
  • MS in Condensed Matter Physics, International Center for Theoretical Physics (Italy)
  • BS in Physics, National University of Mongolia (Ulan Bator, Mongolia)

Publications

  • L.A. Viehland, A. Lutfullaeva, J. Dashdorj and R. Johnsen, "Accurate Gaseous Ion Mobility Measurements”, Int. J. Ion Mobility Spectrum., DOI: 10.1007/s12127-017-0220-0 (2017).
  • W.R. Willoughby, M.E. Zvanut, J. Dashdorj, and M. Bockowski, “A model for Be-related photo-absorption in compensated GaN:Be substrates”, J. Appl. Phys. 120, 115701 (2016).
  • M.E. Zvanut, J. Dashdorj, U. Sunay, J.H. Leach, and K. Udwary, “Effect of local fields on the Mg acceptor in GaN films and GaN substrates”, J. Appl. Phys. 120, 135702 (2016).
  • M.E. Zvanut, J. Dashdorj, J.A. Freitas Jr., E.R. Glaser, W.R. Willoughby, J.H. Leach, and K. Udwary, “Incorporation of Mg in free-standing HVPE GaN substrates”, J. Electron. Mater., DOI: 10.1007/s11664-0164413-9 (2016).
  • M.E. Zvanut, J. Dashdorj, J.A. Freitas Jr., E.R. Glaser, J.H. Leach, and K. Udwary, “Incorporation of Mg into thick free-standing HVPE GaN”, MRS Advances, DOI: 10.1557/adv.2016.102 (2016).
  • J. Dashdorj, W.R. Willoughby, M.E. Zvanut, and M. Bockowski, “Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method”, DOI 10.1002/ pssc.201400181, Phys. Status Solidi C, 4-5, 338 (2015).
  • V.M. Poole, J. Dashdorj, M.E. Zvanut, and M.D. McCluskey, ”Large persistent photoconductivity in strontium titanate at room temperature”, Mater. Res. Soc. Symp. Proc. 1792 (2015).
  • J. Dashdorj, M.E. Zvanut, and M. Bockowski, “Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method”, DOI 10.1002/pssb.201451567, Phys. Status Solidi B, 1-5, 1 (2015).
  • V.V. Fedorov, T. Konak, J. Dashdorj, M.E. Zvanut, and S.B. Mirov, “Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals”, Opt. Mater. 37, 262 (2014).
  • U.R. Sunay, J. Dashdorj, M.E. Zvanut, J.G. Harrison, J. H. Leach, and K. Udwary, “Charge Transfer in Fe-doped GaN: the Role of the Donor”, ICDS-AIP Conf. Proc. 1583, 297-300 DOI: 10.1063/1.4865656 (2014).
  • J. Dashdorj, M.E. Zvanut, J.G. Harrison, K. Udwary, and T. Paskova, “Charge transfer in semi-insulating Fe-doped GaN”, J. Appl. Phys. 112, 013712 (2012).
  • M.E. Zvanut, U.R. Sunay, J. Dashdorj, W.R. Willoughby, and A.A. Allerman, “Mg-hydrogen interaction in AlGaN alloys”, Proc. SPIE 8262, DOI: 10.1117/12.916073 (2012).
  • M.E. Zvanut, Y. Uprety, J. Dashdorj, M. Moseley, and W. Alan Doolittle, “Passivation and activation of Mg acceptors in heavily doped GaN”, J. Appl. Phys. 110, 044508 (2011).
  • J. Dashdorj, M.E. Zvanut, and L.J. Stanley, “Iron-related defect levels in SrTiO3 measured by photo-electron paramagnetic resonance spectroscopy”, J. Appl. Phys. 107, 083513 (2010).
  • M.E. Zvanut, S.A. Thomas, and J. Dashdorj, “Intrinsic surface defects on 4H-SiC substrates”, Mater. Res. Soc. Symp. Proc. 1246, B-12-03 (2010).
  • M. Batory, M. Czerniak-Reczulska, J. Dashdorj, M.E. Zvanut, and P. Niedzielski, “Characteristic physical and chemical properties of carbon powders in terms of their use in pharmaceutical and cosmetic industry”, Polish J. Mater. Engineering, 4, 1132 (2010).
  • M.E. Zvanut, G. Ngetich, J. Dashdorj, N.Y. Garces, and E.R. Glaser, “Photo-induced behavior of the VCCSi- pair defect in 4H-SiC grown by physical vapor transport and halide chemical vapor deposition”, J. Appl. Phys. 106, 064908 (2009).
  • J. Dashdorj, M.E. Zvanut, and J.G. Harrison, “Measurements of optical cross sections of carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance”, J. Appl. Phys. 104, 113707 (2008).
  • J. Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-electron paramagnetic resonance spectroscopy”, Mater. Res. Soc. Symp. Proc. 1034, K-10-19 (2007).
  • J. Dashdorj, “Development of non-contact measurements for carrier recombination lifetime”, Ph.D. dissertation, pp. 1-128 (2007). Advisors: Drs. Reuben T. Collins (CSM) and Richard K. Ahrenkiel (NREL).
  • K. Metzger, R.K. Ahrenkiel, J. Dashdorj, and D.J. Friedman, “Analysis of charge separation dynamics in a semiconductor junction”, Phys. Rev. B 71, 035301 (2005).
  • R.K. Ahrenkiel, W.K. Metzger, M. Page, R. Reedy, J. Luther, and J. Dashdorj, “Relationship of recombination lifetime and dark current in silicon p-n junctions”, IEEE Specialists, 76 (2005).
  • R.K. Ahrenkiel, J. Dashdorj, and S.W. Johnston, “Recombination lifetimes using the RCPCD technique: Comparison with other methods”, DOE Solar Energy Technol. Rev. Meeting (2004).
  • K. Ahrenkiel and J. Dashdorj, “Interface recombination velocity measurement by a contactless microwave technique”, J. Vac. Sci. Technol. B 22(4), 2063 (2004).
  • J. Dashdorj, R.K. Ahrenkiel, and W.K. Metzger, “Modeling of recombination lifetimes in charge-separation device structures”, Mater. Res. Soc. Symp. Proc. 799, Z4.5 (2003).
  • R.K. Ahrenkiel, D. Friedman, W.K. Metzger, M. Page, and J. Dashdorj, “Observation of retarded recombination in charge separation structures”, Mater. Res. Soc. Symp. Proc. 799, Z4.6 (2003).
  • E. Marone and D. Jamiyanaa, “Tidal characteristics and a numerical model for the M2 tide at the estuarine complex of the Bay of Paranaguá, Paraná, Brazil”, Nerítica 11, 95-107 (1997).

Awards

  • Italian Government Scholarship (ICTP, Trieste, Italy)
  • International Atomic Energy Agency Fellowship (Vienna, Austria)
  • TWAS/CNPQ Fellowship for Visiting Scientist (University of Parana, Brazil)

Organizations

Achievements

  • Mentor & Co-mentor - NSF Research Experience for Undergraduates (REU)
  • Instructor - Alabama Louis Stokes Alliance for Minority Participation Program
  • Winner of Doctoral Candidate Research Fair - Colorado School of Mines

Presentations

  • U. Sunay, M.E. Zvanut, J. Dashdorj, and J.H. Leach, “Frequency-dependent EPR studies of strain localized around the Mg acceptor in free-standing GaN”, APS March Meeting, New Orleans, LA, 2017.
  • W.R. Willoughby, M.E. Zvanut, J. Dashdorj, and M. Bockowski, “Charge transfer in Compensated GaN:Be substrates observed with magnetic resonance”, APS March Meeting, New Orleans, LA, 2017.
  • J. Dashdorj, M.E. Zvanut, and M.M. Bockowski, “EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method”, APS March Meeting, San Antonia, TX, 2015.
  • U. Sunay, J. Dashdorj, M.E. Zvanut, J.G. Harrison, J.H. Leach, and K. Udwary, “Charge transfer in Fe-doped GaN: The role of the donor”, International Conference on Defects in Semiconductors, Bologna, Italy, 2013.
  • U.R. Sunay, J. Dashdorj, M.E. Zvanut, K. Udwary, and J. Leach, “Fe charge state kinetics in semi-insulating Fe-doped GaN”, APS March Meeting, Baltimore, MD, 2013.
  • J. Dashdorj, M.E. Zvanut, J.G. Harrison, T. Paskova, and K. Udwary, “Thermal capture rate of electrons by Fe acceptor in GaN”, APS March Meeting, Dallas, TX, 2011.
  • U.R. Sunay, M.E. Zvanut, and J. Dashdorj, “Time-dependent hydrogen annealing of Mg doped GaN”, APS Meeting of Southeastern Section, Roanoke, VA, 2011.
  • J.E. Lowder, M.W. Moseley, B. Gunning, W.A. Doolittle, M.E. Zvanut, and J. Dashdorj, “Characterization of Mg Acceptors in GaN: Mg Grown by Metal Modulated Epitaxy and MOCVD”, AVS 58th Annual International Symposium and Exhibition, Nashville, TN, 2011.
  • M.E. Zvanut, Y. Uprety, J. Dashdorj, M. Moseley, and W. Alan Doolittle, “Hydrogen incorporation in high hole density GaN: Mg”, APS March Meeting, Dallas, TX, 2011.
  • M.E. Zvanut, J. Dashdorj, M.W. Moseley, and W. Alan Doolittle, “The local environment of the Mg impurity in high hole density p-type GaN: Mg”, International Workshop on Nitride Semiconductors, Tampa, FL, 2010.
  • M.E. Zvanut, S.A. Thomas, and J. Dashdorj, “Intrinsic Surface Defects on 4H-SiC Substrates”, MRS Spring Meeting, San Francisco, CA, 2010.
  • M.E. Zvanut and J. Dashdorj, “Mg-related EPR signal in high hole density GaN”, APS March Meeting, Portland, OR, 2010.
  • J. Dashdorj, M.E. Zvanut, and J.G. Harrison, “Charge transfer kinetics of the carbon vacancy defect in 4H-SiC”, APS March Meeting, Pittsburgh, PA, 2009.
  • J. Dashdorj, M.E. Zvanut, and J. Harrison, “A defect relaxation model for the carbon vacancy in SiC”, APS March Meeting, New Orleans, LA, 2008.
  • J. Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-Electron Paramagnetic Resonance Spectroscopy”, MRS Fall Meeting, Boston, MA, 2007.
  • J. Dashdorj and R.T. Collins, “Development of lifetime mapping system for polycrystalline silicon”, Doctoral Candidate Research Fair, Colorado School of Mines, Golden, CO, 2006.
  • R.K. Ahrenkiel, J. Dashdorj, and S.W. Johnston, “Recombination lifetimes using the RCPCD technique: Comparison with other methods”, Solar Energy Technol. Rev. Meeting, Denver, CO, 2004.
  • J. Dashdorj, R.K. Ahrenkiel, and W.K. Metzger, “Modeling of recombination lifetimes in charge-separation device structures”, MRS Fall Meeting, Boston, MA, 2003.
  • R.K. Ahrenkiel, D. Friedman, W.K. Metzger, M. Page, and J. Dashdorj, “Observation of retarded recombination in charge separation structures”, MRS Fall Meeting, Boston, MA, 2003.