Jamiyanaa Dashdorj, Ph.D.

Jamiyanaa Dashdorj
Assistant Professor of Physics
412-365-1345
Buhl - 234A

Hometown:  UlanBator
Joined Chatham:  2016

ACADEMIC AREAS OF INTEREST

Dr. Dashdorj teaches calculus-based physics and does research with Dr. Larry Viehland (Chatham University) and Dr. Rainer Jonhsen (University of Pittsburgh) to improve accuracy of gaseous ion mobility measurement by using a drift tube mass spectrometer. He collaborates also with Dr. Randall Feenstra’s research group at Carnegie Mellon University to study nano-structured materials by using a low-temperature scanning tunneling microscopy.

PERSONAL AREAS OF INTEREST

Soccer, chess and travel.

BIOGRAPHY

Jami Dashdorj grew up in Mongolia, studied and trained in Austria, Italy, and Brazil, before coming to US for graduate school. He earned his PhD in applied physics from Colorado School of Mines building a non-destructive minority carrier recombination lifetime mapping system at National Renewable Energy Laboratory. Prior to joining the faculty at Chatham, Dr. Dashdorj was a research associate at University of Alabama (Birmingham). With Dr. Mary Ellen Zvanut, he investigated point defects and charge transfer mechanisms in GaN, SrTiO3, ZnSe and SiC using electron paramagnetic resonance spectroscopy.

EDUCATION
  • PhD in Applied Physics, Colorado School of Mines
  • MS in Condensed Matter Physics, International Center for Theoretical Physics (Trieste, Italy)
  • BS in Physics, University of Mongolia (UlanBator)
AWARDS 
  • Italian Government Scholarship (Trieste, Italy)
  • International Atomic Energy Agency Fellowship (Vienna, Austria)
  • TWAS/CNPQ Fellowship for Visiting Scientist at Federal University of Parana (Curitiba, Brazil)
ORGANIZATIONS
  • American Physical Society (APS)
  • Materials Research Society (MRS)
PUBLICATIONS
  • L.A. Viehland, A. Lutfullaeva, J. Dashdorj and R. Johnsen, “Accurate gaseous ion mobility measurements”, Int. J. Ion Mobil. Spec. DOI 10.1007/s12127-017-0220-0 (2017).
  • W.R. Willoughby, M.E. Zvanut, J. Dashdorj, and M. Bockowski, “A model for Be-related photo-absorption in compensated GaN:Be substrates”, J. Appl. Phys. 120, 115701 (2016).
  • M.E. Zvanut, J. Dashdorj, U. Sunay, J.H. Leach, and K. Udwary, “Effect of local fields on the Mg acceptor in GaN films and GaN substrates”, J. Appl. Phys. 120, 135702 (2016).
  • M.E. Zvanut, J. Dashdorj, J.A. Freitas Jr., E.R. Glaser, W.R. Willoughby, J.H. Leach, and K. Udwary, “Incorporation of Mg in free-standing HVPE GaN substrates”, J. Electron. Mater., DOI: 10.1007/s11664-0164413-9 (2016).
  • M.E. Zvanut, J. Dashdorj, J.A. Freitas Jr., E.R. Glaser, J.H. Leach, and K. Udwary, “Incorporation of Mg into thick free-standing HVPE GaN”, MRS Advances, DOI: 10.1557/adv.2016.102 (2016).
  • J. Dashdorj, W.R. Willoughby, M.E. Zvanut, and M. Bockowski, “Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method”, DOI 10.1002/ pssc.201400181, Phys. Status Solidi C, 4-5, 338 (2015).
  • V.M. Poole, J. Dashdorj, M.E. Zvanut, and M.D. McCluskey, ”Large persistent photoconductivity in strontium titanate at room temperature”, Mater. Res. Soc. Symp. Proc. 1792 (2015).
  • J. Dashdorj, M.E. Zvanut, and M. Bockowski, “Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method”, DOI 10.1002/pssb.201451567, Phys. Status Solidi B, 1-5, 1 (2015).
  • V.V. Fedorov, T. Konak, J. Dashdorj, M.E. Zvanut, and S.B. Mirov, “Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals”, Opt. Mater. 37, 262 (2014).
  • U.R. Sunay, J. Dashdorj, M.E. Zvanut, J.G. Harrison, J. H. Leach, and K. Udwary, “Charge Transfer in Fe-doped GaN: the Role of the Donor”, ICDS-AIP Conf. Proc. 1583, 297-300 DOI: 10.1063/1.4865656 (2014).
  • J. Dashdorj, M.E. Zvanut, J.G. Harrison, K. Udwary, and T. Paskova, “Charge transfer in semi-insulating Fe-doped GaN”, J. Appl. Phys. 112, 013712 (2012).
  • M.E. Zvanut, U.R. Sunay, J. Dashdorj, W.R. Willoughby, and A.A. Allerman, “Mg-hydrogen interaction in AlGaN alloys”, Proc. SPIE 8262, DOI: 10.1117/12.916073 (2012).
  • M.E. Zvanut, Y. Uprety, J. Dashdorj, M. Moseley, and W. Alan Doolittle, “Passivation and activation of Mg acceptors in heavily doped GaN”, J. Appl. Phys. 110, 044508 (2011).
  • J. Dashdorj, M.E. Zvanut, and L.J. Stanley, “Iron-related defect levels in SrTiO3 measured by photo-electron paramagnetic resonance spectroscopy”, J. Appl. Phys. 107, 083513 (2010).
  • M.E. Zvanut, S.A. Thomas, and J. Dashdorj, “Intrinsic surface defects on 4H-SiC substrates”, Mater. Res. Soc. Symp. Proc. 1246, B-12-03 (2010).
  • M.E. Zvanut, G. Ngetich, J. Dashdorj, N.Y. Garces, and E.R. Glaser, “Photo-induced behavior of the VCCSi- pair defect in 4H-SiC grown by physical vapor transport and halide chemical vapor deposition”, J. Appl. Phys. 106, 064908 (2009).
  • J. Dashdorj, M.E. Zvanut, and J.G. Harrison, “Measurements of optical cross sections of carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance”, J. Appl. Phys. 104, 113707 (2008).
  • J. Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-electron paramagnetic resonance spectroscopy”, Mater. Res. Soc. Symp. Proc. 1034, K-10-19 (2007).
  • K. Metzger, R.K. Ahrenkiel, J. Dashdorj, and D.J. Friedman, “Analysis of charge separation dynamics in a semiconductor junction”, Phys. Rev. B 71, 035301 (2005).
  • K. Ahrenkiel and J. Dashdorj, “Interface recombination velocity measurement by a contactless microwave technique”, J. Vac. Sci. Technol. B 22(4), 2063 (2004).
 PRESENTATIONS
  • J. Dashdorj, M.E. Zvanut, and M.M. Bockowski, “EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method”, APS March Meeting, San Antonia, TX, 2015.
  • J. Dashdorj, M.E. Zvanut, J.G. Harrison, T. Paskova, and K. Udwary, “Thermal capture rate of electrons by Fe acceptor in GaN”, APS March Meeting, Dallas, TX, 2011.
  • J. Dashdorj, M.E. Zvanut, and J.G. Harrison, “Charge transfer kinetics of the carbon vacancy defect in 4H-SiC”, APS March Meeting, Pittsburgh, PA, 2009.
  • J. Dashdorj, M.E. Zvanut, and J. Harrison, “A defect relaxation model for the carbon vacancy in SiC”, APS March Meeting, New Orleans, LA, 2008.
  • J. Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-Electron Paramagnetic Resonance Spectroscopy”, MRS Fall Meeting, Boston, MA, 2007.
  • J. Dashdorj, R.K. Ahrenkiel, and W.K. Metzger, “Modeling of recombination lifetimes in charge-separation device structures”, MRS Fall Meeting, Boston, MA, 2003.